摘要 : In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier number fluctuation and mobility flu... 展开 In this paper, we present a physics-based compact model for low frequency noise in high electron mobility transistors (HEMTs). The model is derived considering the physical mechanisms of carrier number fluctuation and mobility fluctuation in the channel. The model is tunable and hence applicable to a wide range of HEMT devices of different geometries and construction. The model is in excellent agreement with experimental data and TCAD simulations. 收起