摘要 : The flicker noise modeling is of great significance in many applications of high electron mobility transistors (HEMTs) in low noise circuits. In this letter, a novel charge-based flicker noise model for HEMTs is proposed, which in... 展开 The flicker noise modeling is of great significance in many applications of high electron mobility transistors (HEMTs) in low noise circuits. In this letter, a novel charge-based flicker noise model for HEMTs is proposed, which introduces the trap-charge fluctuation-based flicker noise modeling method to the charge-based MIT virtual source (MVS) HEMT model. This model is highly compatible with the MVS HEMT model. It can predict the flicker noise performance in a physically rigorous and accurate way. This model is verified by the excellent agreement between simulations and measurement results. 收起