摘要 : We have investigated noise characteristics of novel GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors designed for high-power density applications. The measurements were carried out for various g... 展开
作者 | Balandin~ A. Cai~ S. |
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期刊名称 | 《IEEE Electron Device Letters》 |
页码/总页数 | P.475-477 / 3 |
语种/中图分类号 | 英语 / TN10 |
关键词 | 1f noise Gallium nitride HEMTs MODFETs Semiconductor device noise Voltage Noise measurement Microwave devices Frequency Gallium arsenide |
DOI | 10.1109/55.735751 |
馆藏号 | IELEP0098 |