摘要 : We report a detailed investigation of flicker noise in novel GaN/AlGaN heterostructure field-effect transistors (GaN HFET). Low values of 1/f noise found in these devices (i.e., the Hooge parameter is on the order of 10/sup -1/) o... 展开
作者 | Balandin~ A. Morozov~ S.V. |
---|---|
期刊名称 | 《IEEE Transactions on Microwave Theory and Techniques》 |
页码/总页数 | P.1413-1417 / 5 |
语种/中图分类号 | 英语 / TN |
关键词 | Gallium nitride Aluminum gallium nitride HEMTs MODFETs Microwave communication 1f noise Semiconductor device noise Microwave technology Microwave devices FETs |
DOI | 10.1109/22.780388 |
馆藏号 | IELEP0167 |