摘要 : In this paper, an observation of drain current instability on p-GaN gate AlGaN/GaN HEMTs is reported. Contrary to the Schottky gate AlGaN/GaN HEMTs, which show stable and consistent – curves under different pulsed conditions, the ... 展开
作者 | Chang~ T. Hsiao~ T. Huang~ C. Kuo~ W. Lin~ S. Samudra~ G.S. Liang~ Y.C. |
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作者单位 | |
期刊名称 | 《Electron Devices, IEEE Transactions on》 |
页码/总页数 | 339-345 / 7 |
语种/中图分类号 | 英语 / TN |
关键词 | Aluminum gallium nitride Current measurement Gallium nitride HEMTs Logic gates MODFETs Voltage measurement AlGaN/GaN HEMT high voltage instability p-GaN gate |
馆藏号 | IELEP0099 |