摘要 : The characteristics of ruthenium (Ru) contact to boron doped diamond (BDD) have been investigated before and after annealing. The properties of as-deposited Ru contacts to BDD showed non-linear trend. Interestingly, the contact pr... 展开 The characteristics of ruthenium (Ru) contact to boron doped diamond (BDD) have been investigated before and after annealing. The properties of as-deposited Ru contacts to BDD showed non-linear trend. Interestingly, the contact properties of Ru/BDD exhibited ohmic contact behavior after post-annealing at 500 degrees C. The specific contact resistance (rho(c)) of Ru/BDD was 2.3 x 10(-4) Omega.cm(2) after annealing at 500 degrees C for 20 min in the argon (Ar) ambient. The contact barrier height was 0.075 eV +/- 0.14 eV after annealing at 500 degrees C, evaluated by X-ray photoelectron spectroscopy (XPS). 收起