摘要 :
This paper presents a deep learning
approach for the inverse-design of metal-insulator-metal
metasurfaces for hyperspectral imaging applications.
Deep neural networks are able to compensate for the
complex interactions between...
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This paper presents a deep learning
approach for the inverse-design of metal-insulator-metal
metasurfaces for hyperspectral imaging applications.
Deep neural networks are able to compensate for the
complex interactions between electromagnetic waves and
metastructures to efficiently produce design solutions
that would be difficult to obtain using other methods.
Since electromagnetic spectra are sequential in nature,
recurrent neural networks are especially suited for
relating such spectra to structural parameters.
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摘要 :
It may be argued that the remarkable properties of the high-temperature superconducting cuprates such as the insulator-metal transition (IMT) and the metal-superconductor transition (MST) originate from competition and interplay b...
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It may be argued that the remarkable properties of the high-temperature superconducting cuprates such as the insulator-metal transition (IMT) and the metal-superconductor transition (MST) originate from competition and interplay between the interlayer ionic interaction and the intralayer covalent bonds in these materials. It is proposed here that the microscopic order parameter is the local field estimated from the ionic polarization at the sub-unit cell level, and it is demonstrated that it shows a strong temperature as well as chemical doping dependence. The out-of-plane ionicity induces an interlayer electron transfer that reduces the ionicity of the layers and leads to IMT, while the in-plane covalency induces in-plane intersite hole transfer that increases the out-of-plane ionicity. It is suggested that this competition leads to a local field catastrophe at a critical temperature T-c that drives the compound to MST. The asymmetry of the free charge carrier density breaks locally the mirror reflection symmetry of the order parameter, leading to a pairing between the real current and the polarization current.
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摘要 :
Metal–insulator–metal (MIM) capacitors with full atomic-layer-deposition AlO/ZrO/SiO/ZrO/AlO stacks were explored for the first time. As the incorporated SiO film thickness increased from 0 to 3 nm, the quadratic and linear volt...
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Metal–insulator–metal (MIM) capacitors with full atomic-layer-deposition AlO/ZrO/SiO/ZrO/AlO stacks were explored for the first time. As the incorporated SiO film thickness increased from 0 to 3 nm, the quadratic and linear voltage coefficients of capacitance ( and ) of the MIM capacitors reduced significantly from positive values to negative ones. For the stack with 3-nm SiO film, a capacitance density of 7.40 fF/m, of −121 ppm/V, and of −116 ppm/V were achieved, together with very low leakage current densities of A/cm at 5 V at room temperature (RT) and A/cm at 3.3 V at 125 °C, high breakdown field of 6.05 MV/cm, and high operating voltage of 6.3 V for a 10-year lifetime at RT. Thus, this type of stacks is a very promising candidate for next generation radio frequency and analog/mixed-signal integrated circuits.
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摘要 :
In order to increase two important factors of capacitance and self-resonant frequency (SRF) of the microelectromechanical systems (MEMS)-switched capacitor, we developed a room-temperature-grown high- TiO dielectric layer in the m...
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In order to increase two important factors of capacitance and self-resonant frequency (SRF) of the microelectromechanical systems (MEMS)-switched capacitor, we developed a room-temperature-grown high- TiO dielectric layer in the metal–insulator–metal (MIM) capacitor and an SU-8 bridged beam structure in the MEMS switch. The high- TiO dielectric layer, which has a relative dielectric constant of up to 32, was utilized to minimize the MIM capacitors’ sizes while maintaining their high capacitance values. In addition, the SU-8 bridged beam structure of the MEMS switch, whose radio frequency (RF) signal interconnecting part is electrically isolated from the switching mechanism, was introduced to shorten the RF signal path. Because of the high- dielectric and the bridged beam structure, we have achieved a very high capacitance of up to 14.3 pF with an SRF of 1.8 GHz (the MIM capacitor size was m m). The same-sized MIM capacitor with a conventional SiN dielectric layer and a conventional cantilever beam-switched capacitor showed only 4.9 pF with an SRF of 2.8 GHz. In a similar capacitance value, the proposed switched capacitor showed 22% increase in SRF (7.1 GHz at 0.92 pF) compared with the conventional cantilever beam switched capacitor with a SiN dielectric layer (5.8 GHz at 1.01 pF). The high SRF was attributed to the short RF signal path and the minimized capacitor size, thereby reducing parasitic inductance. [2014-0130]
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