摘要 : Metal–insulator–metal (MIM) capacitors with full atomic-layer-deposition AlO/ZrO/SiO/ZrO/AlO stacks were explored for the first time. As the incorporated SiO film thickness increased from 0 to 3 nm, the quadratic and linear voltag... 展开 Metal–insulator–metal (MIM) capacitors with full atomic-layer-deposition AlO/ZrO/SiO/ZrO/AlO stacks were explored for the first time. As the incorporated SiO film thickness increased from 0 to 3 nm, the quadratic and linear voltage coefficients of capacitance ( and ) of the MIM capacitors reduced significantly from positive values to negative ones. For the stack with 3-nm SiO film, a capacitance density of 7.40 fF/m, of −121 ppm/V, and of −116 ppm/V were achieved, together with very low leakage current densities of A/cm at 5 V at room temperature (RT) and A/cm at 3.3 V at 125 °C, high breakdown field of 6.05 MV/cm, and high operating voltage of 6.3 V for a 10-year lifetime at RT. Thus, this type of stacks is a very promising candidate for next generation radio frequency and analog/mixed-signal integrated circuits. 收起