摘要 : Modern mobile processors integrating an increasing number of cores into one single chip demand large-capacity, on-chip, last-level caches (LLCs) in order to achieve scalable performance improvements. However, adopting traditional ... 展开 Modern mobile processors integrating an increasing number of cores into one single chip demand large-capacity, on-chip, last-level caches (LLCs) in order to achieve scalable performance improvements. However, adopting traditional memory technologies such as SRAM and embedded DRAM (eDRAM) leakage and scalability problems. Spin-transfer torque magnetic RAM (STT-MRAM) is a novel nonvolatile memory technology that has emerged as a promising alternative for constructing on-chip caches in high-end mobile processors. STT-MRAM has many advantages, such as short read latency, zero leakage from the memory cell, and better scalability than eDRAM and SRAM. Multilevel cell (MLC) STT-MRAM further enlarges capacity and reduces per-bit cost by storing more bits in one cell. 收起