摘要 : The influence of two different ohmic electrodes (W and Ta) on the resistive switching characteristics of TaO-based resistive random access memory (ReRAM) devices has been studied. Consistently, higher resistance OFF states have be... 展开 The influence of two different ohmic electrodes (W and Ta) on the resistive switching characteristics of TaO-based resistive random access memory (ReRAM) devices has been studied. Consistently, higher resistance OFF states have been observed with the W-ohmic electrode under the same operational conditions for all reset stop voltages ( during both the dc and ac measurements. The deeper reset for samples with W-electrode is attributed to the less negative Gibbs-free energy of W-oxide compared with Ta-oxide, resulting in easier re-oxidation of the filament through oxygen exchange with the W-electrode. The higher with the W-electrode enables 3-bit multilevel cell operation in the Pt/W/TaO/Pt ReRAM device. An excellent retention for these eight states is demonstrated at 125 °C for s. Furthermore, the TaO ReRAM device with both the electrodes shows high endurance up to cycles based on two states. 收起