摘要 : A full capacitance model for Amorphous Oxide Semiconductor Thin Film Transistors (AOSTFTs), considering the effect of the drain contact overlap in bottom gate passivated structures is presented. It is shown that this drain overlap... 展开
作者 | Cerdeira~ A. Estrada~ M. Hernandez-Barrios~ Y. Hernandez~ I. Iniguez~ B. |
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作者单位 | |
期刊名称 | 《Solid-State Electronics》 |
页码/总页数 | 16-22 / 7 |
语种/中图分类号 | 英语 / TN |
关键词 | Capacitance model AOSTFT modeling Dynamic modeling |
DOI | 10.1016/j.sse.2019.03.031 |
馆藏号 | TN-149 |