摘要 : A comprehensive study of dielectric modulated (DM) drift regions for power devices is presented in this paper. The performance of this structure is theoretically analyzed and compared with both conventional and superjunction (SJ) ... 展开
作者 | Jiuyang Zhou Chih-Fang Huang Chia-Hui Cheng Feng Zhao |
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作者单位 | |
期刊名称 | 《IEEE Transactions on Electron Devices》 |
页码/总页数 | 2255-2260 / 6 |
语种/中图分类号 | 英语 / TN |
关键词 | Analytical model cylindrical cell dielectric modulation (DM) silicon silicon carbide superjunction (SJ) superjunction (SJ). |
馆藏号 | IELEP0099 |