摘要 : A new relationship between the specific ON-resistance and breakdown voltage for the balanced symmetric superjunction (SJ) device is presented to produce the lowest for a given . The design formulas, including the doping density... 展开 A new relationship between the specific ON-resistance and breakdown voltage for the balanced symmetric superjunction (SJ) device is presented to produce the lowest for a given . The design formulas, including the doping density NW and the drift length , are given for both the nonfull depletion (NFD) and the full depletion SJ devices with an introduction of the normalized factor . For the NFD SJ MOSFET, an relationship is obtained. The analytical results show good agreement with the numerical results. 收起