摘要 : A comprehensive study on the dielectric modulated (DM) drift region for power devices is presented in this paper. The performance of this drift region structure is theoretically analyzed and compared with other two structures: con... 展开
作者 | Chih-Fang Huang Jiuyang Zhou Chia-Hui Cheng Feng Zhao |
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作者单位 | |
期刊名称 | 《IEEE Transactions on Electron Devices》 |
页码/总页数 | 2261-2267 / 7 |
语种/中图分类号 | 英语 / TN |
关键词 | Analytical model dielectric modulation silicon silicon carbide (SiC) superjunction (SJ) switching loss switching loss. |
馆藏号 | IELEP0099 |