摘要 : In this paper a performance based comparison of top and bottom contact organic thin film transistor (OTFT) device structures, using two dimensional numerical simulations has been carried out. In addition to this, investigations pe... 展开 In this paper a performance based comparison of top and bottom contact organic thin film transistor (OTFT) device structures, using two dimensional numerical simulations has been carried out. In addition to this, investigations pertaining to the estimation of contact resistance in these OTFTs were also performed. To estimate contact resistance the conventional transmission line method and modified transmission line method (M-TLM) were respectively invoked. Our simulation results clearly indicate that the latter is more accurate in the estimation of contact resistance compared to the conventional method. Furthermore, the M-TLM was used to estimate the gate voltage and film thickness dependence of the contact resistance for the two device structures. The observed results have been explained on the basis of the significantly lowered area of carrier injection and extraction regions, at the source/channel and channel/drain interface respectively, in bottom contact transistor that lead to its inferior performance over the top contact transistor. 收起