摘要 : In this letter, decisive advantages of the staggered-type organic field-effect transistors (OFETs) over the coplanar type are elucidated by 2-D device simulation. It is found that the charge transport in the channel is not limited... 展开
作者 | Kim~ C. H. Bonnassieux~ Y. Horowitz~ G. |
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作者单位 | |
期刊名称 | 《Electron Device Letters, IEEE》 |
页码/总页数 | p.1302-1304 / 3 |
语种/中图分类号 | 英语 / TN6 |
关键词 | 2-D simulation Contact resistance device geometry organic field-effect transistors (OFETs) |
DOI | 10.1109/LED.2011.2160249 |
馆藏号 | IELEP0098 |