摘要 : A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization an... 展开 A comprehensive technique for the accurate extraction of the effective lateral doping abruptness and the spreading-resistance components in source/drain extension (EXT) regions is presented by FET on-resistance characterization and physical resistance modeling. The spreading-resistance components under EXT-to-gate overlap, and spacer regions are successfully correlated to the lateral EXT doping abruptness by the relationship between on-resistance $(R_{rm on})$ and overlap capacitance response $(C_{rm ov})$ measured from 90-nm-node silicon-on-insulator MOSFETs. The accurate determination of lateral doping abruptness is found to be essential for linking the external spreading resistance to intrinsic short-channel device characteristics. 收起