摘要 : Apart from excellent electrostatic capability and immunity to short-channel effects, the performance of gate-all-around (GAA) nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) can be further enhanced by in... 展开 Apart from excellent electrostatic capability and immunity to short-channel effects, the performance of gate-all-around (GAA) nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) can be further enhanced by incorporating strain. Owing to the technological importance of strained GAA (S-GAA) NW MOSFETs in modern electronics, we have proposed an analytical model of the threshold voltage and drain current for S-GAA NW MOSFETs taking into account the appreciable contributions of source (S) and drain (D) series resistances in the nanometer regime, along with quantum mechanical effect. We have focused on the elliptical cross section of the device as is necessary to consider the fabrication imperfections which give rise to such cross section, rather than an ideal circular structure. Incorporating S/D series resistance in the model of drain current demands for algorithms based on multi-iterative technique, which has been proposed in this paper for analyzing the impact of strain, NW width, aspect ratio and so on, on the performance of S-GAA NW devices with emphasis on CMOS digital circuits. Based on our proposed methodology, we have also investigated the scope of using high-k dielectric materials and metal gate in S-GAA NW structures. 收起