摘要 :
Si(110) surface morphology evolution under normal-incident Ar+ ion sputtering has been studied as a function of Si temperature with the ion energy of 1.5keV and the ion flux 20μA/cm2. During temperature rising from room temperatu...
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Si(110) surface morphology evolution under normal-incident Ar+ ion sputtering has been studied as a function of Si temperature with the ion energy of 1.5keV and the ion flux 20μA/cm2. During temperature rising from room temperature to 800℃, Si(110) surface morphology changes from a dim dot/hole pattern to a distinct dot one, meanwhile the surface roughness increases steadily. The usually-accepted Bradley-Harper model fails to explain these data. By taking into account the Ehrlich-Schwoebel effect in the nanostructuring process, a simulation work was conducted based on a continuum dynamic model, which reproduces the experimental results.
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