摘要 :
A compact model for the quasistatic charge and capacitances in organic thin-film transistor (OTFT) is derived and implemented for the simulation of organic circuits. A model for organic ring oscillator circuits is also developed. ...
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A compact model for the quasistatic charge and capacitances in organic thin-film transistor (OTFT) is derived and implemented for the simulation of organic circuits. A model for organic ring oscillator circuits is also developed. Comparing the models to experimental data, the simulation qualitatively reproduces the experimental data for frequency, amplitudes and waveforms. The simulation results indicate that the quasistatic model underestimates the capacitances in organic circuits, and it is shown that the geometrical capacitances originating from layout and gate overlap dominate in organic ring oscillators.
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The realization of organic electronic technologies requires the availability of patterning techniques that are compatible with chemically sensitive materials. We demonstrate an approach that allows the photolithographic patterning...
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The realization of organic electronic technologies requires the availability of patterning techniques that are compatible with chemically sensitive materials. We demonstrate an approach that allows the photolithographic patterning of organic films without their exposure to harmful solvents, and achieves micrometer resolution. Examples of additive and subtractive patterning of polymers as well as small molecules show this approach to be quite generic. The fabrication of a pentacene transistor with a 2 μm channel length and conducting polymer electrodes is demonstrated.
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In this paper, the electrical stability of organic thin-film transistors (OTFTs) were investigated. Solution and photolithography technologies were used for organic thin film formation and patterning. All stacks were constructed w...
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In this paper, the electrical stability of organic thin-film transistors (OTFTs) were investigated. Solution and photolithography technologies were used for organic thin film formation and patterning. All stacks were constructed with organic materials. However, the polymer-type organic semiconductor material was used for active layer. Also, all process temperatures taken place below 120℃. In addition, the OTFTs exhibit a good process uniformity and high stability. Furthermore, the OTFTs integrated with 6-inch active matrix organic light emitting diodes (AMOLEDs) was realized.
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Thin film organic field-effect transistors were grown with vapor-deposited polycrystallineoctithiophene on silicon oxide insulating layers. This component requires an ohmic source and drain contacts for ideal operation. The perfor...
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Thin film organic field-effect transistors were grown with vapor-deposited polycrystallineoctithiophene on silicon oxide insulating layers. This component requires an ohmic source and drain contacts for ideal operation. The performance of organic electronic-devices is often limited by injection. In many real situations, however and specifically in organic devices, the injection of charge carriers from metals into semiconductors is non-linear. This has an adverse impact on the performance of thin film transistors, and makes the analysis of electrical measurements a complex task because contact effects need to be disentangled from transistor properties. This paper deals with the effects of non-ohmic contacts on the modeling of organic transistors and gives specific rules on how to extract the real transistor parameters using only electrical measurements. Several methods are used in order to study the influence of the contact resistance on the performance of organic transistors. This influence appears especially on the current-voltage characteristics of organic field effect transistor. We present a first method used to extract the key parameters of OFET such as; mobility, threshold voltage and contact resistances using the fit of the transfer characteristic of the devices. The second method has been used to exploit the different functional dependences of current on gate voltage which is induced by the presence of contact resistances in the linear and in the saturation regimes. All electrical key parameters of OFETs based on octithiophene have been extracted and we demonstrate that both mobility and contact resistance depend on gate voltage and temperature.
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Ion-sensitive field-effect transistors (ISFETs) are used as elementary devices to build many types of chemical sensors and biosensors. Organic thin-film transistor (OTFT) ISFETs use either small molecules or polymers as semiconduc...
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Ion-sensitive field-effect transistors (ISFETs) are used as elementary devices to build many types of chemical sensors and biosensors. Organic thin-film transistor (OTFT) ISFETs use either small molecules or polymers as semiconductors together with an additive manufacturing process of much lower cost than standard silicon sensors and have the additional advantage of being environmentally friendly. OTFT ISFETs' drawbacks include limited sensitivity and higher variability. In this paper, we propose a novel design technique for integrating extended-gate OTFT ISFETs (OTFT EG-ISFETs) together with dual-gate OTFT multiplexers (MUXs) made in the same process. The achieved results show that our OTFT ISFET sensors are of the state of the art of the literature. Our microsystem architecture enables switching between the different ISFETs implemented in the chip. In the case of sensors with the same gain, we have a fault-tolerant architecture since we are able to replace the faulty sensor with a fault-free one on the chip. For a chip including sensors with different gains, an external processor can select the sensor with the required sensitivity.
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In this letter, we investigated the gate insulator morphology affecting on the electric characteristic variation for organic thin-film transistors (OTFTs). From the transfer characteristics, there is a result with leakage current ...
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In this letter, we investigated the gate insulator morphology affecting on the electric characteristic variation for organic thin-film transistors (OTFTs). From the transfer characteristics, there is a result with leakage current when the gate voltage is lower than the threshold voltage, which is due to the gate insulator thickness variation. Furthermore, regardless of whether the OTFT is operated under positive or negative bias stress, the more severe degradation happened in the hump region of transfer characteristics. Because a thinner gate insulator causes a high electric field, more charges are trapped in a gate dielectric stack.
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An investigation of channel pinchoff close to the drain electrode in a top contact organic thin-film transistor is described using a technique that uses a floating electrode to sense the voltage at the edge of the drain electrode....
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An investigation of channel pinchoff close to the drain electrode in a top contact organic thin-film transistor is described using a technique that uses a floating electrode to sense the voltage at the edge of the drain electrode. Upon sweep of the drain voltage from zero to a value larger than saturation voltage, the floating probe tracks the drain voltage until the accumulation layer in the channel is pinched off causing it to be disconnected from the drain. The voltage to which the floating probe gets stuck is equal to the pinchoff voltage of the transistor. Results from 2-D numerical simulation of a transistor are presented to validate the principle of the proposed approach and the experimental results obtained with pentacene transistors are presented to highlight the insight offered by it.
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To develop an all organic active matrix light emitting display required for large area thin display, electronic paper and electronic paints, Si-based thin film transistor has to be replaced with organic thin film transistor (OTFT)...
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To develop an all organic active matrix light emitting display required for large area thin display, electronic paper and electronic paints, Si-based thin film transistor has to be replaced with organic thin film transistor (OTFT). The most important issues in OTFT are the low charge carrier mobility and poor stability under ambient conditions, which critically depend on how organic thin films are grown on different substrates. Here we show that both these issues are correlated and can be overcome by certain surface morphology which can only be achieved through anisotropic growth. Careful control of different growth parameters can lead to unprecedented control on thin film morphology which has been shown to be engineered reversibly and reproducibly. High temperature and low evaporation rate increase the diffusive mobility of molecules, which are responsible for the stacking of molecules to higher length scales. By carefully choosing a temperature and evaporation rate, elongated rod-like grains were grown for achieving high performance and stable thin film transistors.
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This work shows that placement of source/drain contacts on top of organic semiconductor film in top-contact organic thin film transistors (OTFT) can offer significant improvement in device speed as compared to bottom-contact devic...
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This work shows that placement of source/drain contacts on top of organic semiconductor film in top-contact organic thin film transistors (OTFT) can offer significant improvement in device speed as compared to bottom-contact devices. 2D numerical simulations and analytical models for unity gain frequency are used to quantify the differences between the top and bottom-contact devices. It is shown that while transconductance is lower in top-contact devices, the gate-drain capacitance is significantly lower as well resulting in improved frequency performance. It is also shown that there is an optimum semiconductor film thickness at which maximum unity gain frequency in top-contact OTFT is obtained.
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We present a QQVGA top emitting monochrome AMOLED display with 85dpi resolution using an organic TFT backplane on low temperature PEN-foil. The backplane process flow is based on a 7 layer photolithography process that yields a fi...
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We present a QQVGA top emitting monochrome AMOLED display with 85dpi resolution using an organic TFT backplane on low temperature PEN-foil. The backplane process flow is based on a 7 layer photolithography process that yields a final mobility of the OTFT of ～0.4 cm~2/Vs. The aperture ratio of the top-emitting OLEDs is over 75%. For operation at 10 V supply voltage (V_(DD)), the brightness of the display using red and green OLEDs exceeds 200 cd/m~2.
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