摘要 : A compact model for the quasistatic charge and capacitances in organic thin-film transistor (OTFT) is derived and implemented for the simulation of organic circuits. A model for organic ring oscillator circuits is also developed. ... 展开 A compact model for the quasistatic charge and capacitances in organic thin-film transistor (OTFT) is derived and implemented for the simulation of organic circuits. A model for organic ring oscillator circuits is also developed. Comparing the models to experimental data, the simulation qualitatively reproduces the experimental data for frequency, amplitudes and waveforms. The simulation results indicate that the quasistatic model underestimates the capacitances in organic circuits, and it is shown that the geometrical capacitances originating from layout and gate overlap dominate in organic ring oscillators. 收起