摘要 : To achieve the controlled synthesis of high-quality graphene/nickel heterostructure in practice, the study of the atomistic mechanism of graphene growth on the Ni (110) facet whose lattice mismatches with graphene is indispensable... 展开
作者 | Chen~ Shandeng Bai~ Qingshun Wang~ Hongfei Dou~ Yuhao Guo~ Wanmin |
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作者单位 | |
期刊名称 | 《Physica, E. Low-dimensional systems & nanostructures》 |
总页数 | 8 |
语种/中图分类号 | 英语 / O47 TB383 |
关键词 | Graphene Ni (110) Chemical vapor deposition Molecular dynamics DEPOSITION NICKEL NUCLEATION LIQUID CRYSTALLINE MORPHOLOGY SUBSTRATE TEMPLATE QUALITY SURFACE |
馆藏号 | N2008EPST0009952 |