摘要 : We fabricated metal-oxide-semiconductor (MOS) structures containing Cr nanocrystals (NCs) as a charge trapping layer and investigated their memory characteristics. Symmetric and large flat-band voltage shifts were observed for for... 展开 We fabricated metal-oxide-semiconductor (MOS) structures containing Cr nanocrystals (NCs) as a charge trapping layer and investigated their memory characteristics. Symmetric and large flat-band voltage shifts were observed for forward and reverse gate voltage sweeps due to the charging/ discharging of Cr NCs. Memory capacitors with Cr NCs of 4 - 8 nm in size showed the best memory characteristics, with a memory window of ~7.3 V for a sweep voltage range of ±7 V and a stored electron charge density of~3.1./×12 Smac le1r mC2r 0NCs ~s~e)me(d to sufer from surface oxidation of the NCs. Compared with higher work function Pt, Cr NC memory capacitor, with an intermediate work function, showed a faster program/erase speed and better charge retention. We discuss how the work function of a metal NC affects the memory characteristics. 收起