摘要 : As the integration density and capacitance of semiconductor devices have increased, high-dielectric (High-k) materials have attracted considerable attention. We investigated the dependence of threshold voltage (Vth) characteristic... 展开
作者 | Takeshi Sasaki Takuya Imaraoto Tetsuo Endoh |
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作者单位 | |
期刊名称 | 《電子情報通信学会技術研究報告. 電子デバイス. Electron Devices》 |
总页数 | 6 |
语种/中图分类号 | 英语 / TN80 |
关键词 | High-k dielectric film High-k/Metal Gate Stack Mobility CMOS Inverter |
馆藏号 | N2008EPST0011571 |