摘要: In this paper, novel low loss, wide-band coplanar stripline technology for RF/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-gl... 展开 In this paper, novel low loss, wide-band coplanar stripline technology for RF/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semiconductor devices and microelectromechanical systems (MEMS). 收起