摘要: Characterization of failure mechanisms of MOS integrated circuits by observable effects during stress tests is described. Electronic properties and dielectric strength of oxides were determined. Gate protection; surface ion migrat... 展开 Characterization of failure mechanisms of MOS integrated circuits by observable effects during stress tests is described. Electronic properties and dielectric strength of oxides were determined. Gate protection; surface ion migration; capacitance and leakage of diffused structures; aluminum migration; and contact reliability were studied. Effective gain factor and channel drift mobility by RON-structures; field oxide inversion and punch through; and stability of load MOSTs and inverters were investigated. Sheet resistance; contact resistance, crystal defects; and mechanical strains were examined. 收起