摘要: The feasibility of representing MOS circuit reliability properties by test structures is considered. The application of test structures for reliability evaluation and in-process reliability assurance is reviewed. Possibilities of ... 展开 The feasibility of representing MOS circuit reliability properties by test structures is considered. The application of test structures for reliability evaluation and in-process reliability assurance is reviewed. Possibilities of implementing test structures in manufacturing are discussed. Accelerations models, failure mechanism stress dependence, and defect modes are summarized. Reliability assurance using test structures is outlined and test procedures corresponding to the different reliability aspects are described. Parts of the available test structures are suggested for in-process control. 收起