摘要 : An effective two-step sensitization technique was implemented in PbSe thin films, leading to a remarkable improvement in the optoelectronic performance of PbSe photodetectors. The phase composition, surface and cross-sectional mor... 展开 An effective two-step sensitization technique was implemented in PbSe thin films, leading to a remarkable improvement in the optoelectronic performance of PbSe photodetectors. The phase composition, surface and cross-sectional morphology, temperature-dependent carrier concentration and mobility as well as the detect-ability of PbSe films after sensitization were systematically investigated using characteristic techniques. The optimal PbSe film oxygen sensitized at 450 ℃ exhibited a room-temperature photodetection with a carrier concentration of 5.31 × 10~(16) cm~(-3), carrier mobility of 16.52 cm~2/V~(-1)s~(-1), and detectivity of 2.25 × 10~9 Jones. High-temperature argon heat treatment and oxygen sensitization of PbSe films are expected to suppress recombination losses and significantly improve the optoelectronic properties of sensitized PbSe films due to enhanced carrier separation and transport. The enhanced photoresponse mechanism of the PbSe films through two-step sensitization method was also discussed. These results suggest that the proposed method can be applied to high-performance lead selenide photodetectors. 收起