摘要 : Organic field effect transistors were fabricated using photolithography and plasma etching technique with defect free Poly(3-hexylthiophene) (P3HT) and P3HT 90 % regioregular with different temperatures of annealing at normal ambi... 展开
作者 | Leite~ Gabriel V. Boudinov~ Henri I. |
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作者单位 | |
期刊名称 | 《IEEE transactions on device and materials reliability》 |
页码/总页数 | 111-116 / 6 |
语种/中图分类号 | 英语 / TN |
关键词 | Transistors Annealing Polymers OFETs Thermal stability Degradation Stability criteria Nickel contacts organic field effect transistor P3HT regioregularity transistor stability |
DOI | 10.1109/TDMR.2021.3059226 |
馆藏号 | IELEP0086 |