摘要 : The goal of high efficiency in Si solar cells has been developed to a close limit by Si heterojunction (SHjj scheme. The further work should aim to simplify its fabrication process for the reduction of cost. In this study, a schem... 展开 The goal of high efficiency in Si solar cells has been developed to a close limit by Si heterojunction (SHjj scheme. The further work should aim to simplify its fabrication process for the reduction of cost. In this study, a scheme single-side heterojunction solar cell with hydrogenated microcrystalline silicon oxide emitter ((μc-SiO_x:H(p~+ )) and diffused back surface field (BSF) was presented, to save the flip of wafers and the number of vacuum chambers. The device performance evolution was performed by AFORS-HET simulation and experiments. It is demonstrated that FF of the solar cell is improved using diffused BSF to replace the intrinsic and doped stack hydrogenated amorphous silicon (a-Si:H(n~+/i)) layer in HIT solar cell, but J_(sc) and V_(oc) decreased. The former ascribes to the better conductivity of diffused BSF and band offset free in homojunction, the later the free carrier absorption in diffused region and the removal of rear a-Si:H passivation layer. Further, the introduction of μc-SiO_x:H(p~+ ) emitter can compensate for the loss of J_(sc) above and increase FF, again, due to its wide band gap and high electrical conductivity, leading to a device performance similar to routine HIT device. This work provides a candidate for the roadmap of SHJ solar cells. 收起