摘要 : In this work, a tri-band (Band 39: 1880-1920 MHz, Band 40: 2300-2400 MHz, and Band 38: 2570-2620 MHz), 2-receiver (RX) multiple-in-multiple-out (MIMO), 1-transmitter (TX) TD-LTE (Time Division Long Term Evolution) CMOS transceiver... 展开 In this work, a tri-band (Band 39: 1880-1920 MHz, Band 40: 2300-2400 MHz, and Band 38: 2570-2620 MHz), 2-receiver (RX) multiple-in-multiple-out (MIMO), 1-transmitter (TX) TD-LTE (Time Division Long Term Evolution) CMOS transceiver is presented and fabricated in 0.13-μm CMOS technology. The continuous-time delta-sigma A/D converters (CT Δ∑ ADCs) are directly coupled to the RX front-end outputs to achieve low power. With proper gain allocation and a novel carrier leakage calibration, the TX section ensures at least -40 dBc carrier leakage suppression over 86-dB gain range. The transceiver dissipates maximum 171 mW at 2-RX MIMO mode and 183 mW at 1-TX maximum gain mode. To the best of our knowledge, this is the first research paper on fully integrated commercial TD-LTE transceiver. 收起