摘要 : The combined effects of TID, process corner, and temperature on the performance of high frequency RF circuits are presented. TID experiments at 25°C and 100°C on NMOSFETs and PMOSFETs fabricated in a commercial 45 nm technology sh... 展开
作者 | Jagannathan~ S. Loveless~ T.D. Zhang~ E.X. Fleetwood~ D.M. Schrimpf~ R.D. Haeffner~ T.D. Kauppila~ J.S. Mahatme~ N. Bhuva~ B.L. Alles~ M.L. Holman~ W.T. Witulski~ A.F. Massengill~ L.W. |
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作者单位 | |
期刊名称 | 《IEEE Transactions on Nuclear Science》 |
页码/总页数 | 4498-4504 / 7 |
语种/中图分类号 | 英语 / TL |
关键词 | Compact model K-band LC-VCO RF CMOS RF circuits S-parameters reliability space environment total ionizing dose (TID) voltage-controlled oscillator (VCO) |
DOI | 10.1109/TNS.2013.2283457 |
馆藏号 | IELEP0182 |