摘要 : We introduce the concept of the direct field effect of a neighboring cell transistor on the cell-to-cell interference of nand Flash cell memory. As the cell size reduces to below 50 nm, the electric field of the adjacent cell tran... 展开 We introduce the concept of the direct field effect of a neighboring cell transistor on the cell-to-cell interference of nand Flash cell memory. As the cell size reduces to below 50 nm, the electric field of the adjacent cell transistor directly influences the shallow-trench isolation corner of a selected cell transistor, provoking a significant cell $V_{rm TH}$ shift. In a way different from how conventional parasitic capacitance-coupling effect alters only the floating gate voltage, the direct field effect changes the cell $V_{rm TH}$ intrinsically and provokes an intense $V_{rm TH}$ shift, particularly in word-line direction ($x$-direction), due to severe boron segregation on a channel edge. In a 45-nm design-rule nand Flash cell, this effect provokes 0.67 V of the $V_{rm TH}$ shift in the $x$-direction, while a conventional capacitance-coupling effect yields 0.28 V. 收起