摘要 : In this paper, we introduce the concept of reliability defect,present the time-dependent defect growth model during operations basedon a defect-related gate oxide breakdown mechanism, and build theyield-reliability relation model.... 展开 In this paper, we introduce the concept of reliability defect,present the time-dependent defect growth model during operations basedon a defect-related gate oxide breakdown mechanism, and build theyield-reliability relation model. Discussions presented here can also beapplicable to other device failures when different physics-of-failuremechanisms are found. Through the relation model, it is possible to finda minimum level of latent defect screening to assure the required levelof reliability and predict reliability for new products when it iscombined with a yield prediction model 收起