摘要 : A series of single energy Al,B,and Ga ion implants were performed in the energy range 50 keV to 4MeV into 6H-SiC to characterize the implant depth profiles using secondary ion mass spectrometry(SIMS). From the implant depth profil... 展开 A series of single energy Al,B,and Ga ion implants were performed in the energy range 50 keV to 4MeV into 6H-SiC to characterize the implant depth profiles using secondary ion mass spectrometry(SIMS). From the implant depth profiles empirical formulae were developed to model the range statistics as functions of ion energy. 收起