摘要 : In this paper we suggest an alternative method for the analysis of low frequency noise of transistors based on measurements of phase noise of a test oscillator. This method is demonstrated by experimental results obtained with a s... 展开 In this paper we suggest an alternative method for the analysis of low frequency noise of transistors based on measurements of phase noise of a test oscillator. This method is demonstrated by experimental results obtained with a simple test oscillator with HEMT, and central frequency of 13.769 GHz. The main contribution to phase noise of the test oscillator comes from up conversion of transistor LF noise. This idea and the method can be used for the selection of transistors for high frequency application or for design of test circuit in RF IC manufacture. 收起