摘要 : The characteristics of probe contact noise for tungsten probes used in wafer-level testing are presented. The effects of the biasing current and the probe contact resistance, R/sub c/, on the probe contact noise were investigated.... 展开
作者 | Yassine~ A.M. Clien~ T.M. |
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期刊名称 | 《IEEE Electron Device Letters》 |
页码/总页数 | P.200-202 / 3 |
语种/中图分类号 | 英语 / TN10 |
关键词 | Probes Circuit noise Semiconductor device noise Noise generators Noise measurement Voltage Contact resistance Current measurement System testing Noise reduction |
DOI | 10.1109/55.79555 |
馆藏号 | IELEP0098 |