摘要 : A radiation sensor compatible with CMOS technology is presented. It provides a binary output which changes its state when the total radiation dose exceeds a prefixed threshold. This circuit is intended to be used as a built-in sen... 展开
作者 | Moreno~ E.G. Iniguez~ B. |
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期刊名称 | 《IEEE Transactions on Nuclear Science》 |
页码/总页数 | P.174-178 / 5 |
语种/中图分类号 | 英语 / TL |
关键词 | Threshold voltage Switches MOS devices Inverters Hazards Electron traps Interface states MOSFET circuits CMOS technology Radiation effects |
DOI | 10.1109/23.387358 |
馆藏号 | IELEP0182 |