摘要 : pMOSFETs biased with V/sub gs/>V/sub gd/ during Co/sup 60/ /spl gamma/ irradiation have shown substantial differences between the forward and reverse subthreshold characteristics, induced by a non-uniform charge distribution in th... 展开 pMOSFETs biased with V/sub gs/>V/sub gd/ during Co/sup 60/ /spl gamma/ irradiation have shown substantial differences between the forward and reverse subthreshold characteristics, induced by a non-uniform charge distribution in the gate oxide. Correspondingly, modest differences have been observed in the over-threshold I-V characteristics. After irradiation, the forward subthreshold curves can shift at higher or lower gate voltages than the reverse ones. The former behaviour has been observed in long-channel devices, in agreement with the classical MOS theory and numerical simulations. The latter result has been obtained in short-channel devices, and it has been correlated to a parasitic punch-through conduction mechanism. 收起