摘要 : Raised source/drain (S/D) or raised extension in fully-depleted-SOI (FDSOI) is necessary to boost saturation current, because of increased resistance from the very thin film. We demonstrate that the choice of raising the extension... 展开
作者 | J.L. (Skip) Egley Anne Vandooren Brian Winstead Eric Verret Chip Workman Bruce White Bich-Yen Nguyen |
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作者单位 | |
期刊名称 | 《Solid-State Electronics》 |
页码/总页数 | p.1607-1612 / 6 |
语种/中图分类号 | 英语 / TN30 |
关键词 | fully depleted SOI FDSOI raised SD extension raised S/D |
馆藏号 | TN-149 |