摘要 : This study investigated the implantation of BGe molecular ions into silicon together with post-annealing. The implantation ion energy and fluence were 77 keV and 5x10~(14) cm~(-2), respectively. Secondary ion mass spectrometry (SI... 展开 This study investigated the implantation of BGe molecular ions into silicon together with post-annealing. The implantation ion energy and fluence were 77 keV and 5x10~(14) cm~(-2), respectively. Secondary ion mass spectrometry (SIMS) results revealed that the effects of radiation-enhanced diffusion (RED) led to a deeper boron depth profile in the as-annealed specimen compared to the as-implanted one. The junction depths for a boron level of 10~(17) cm~(-3) were 129 and 189 nm for the as-implanted and as-annealed specimens, respectively. Rutherford backscattering spectrometry with channeling (RBS/C) revealed an amorphous layer of approximately 70 nm in thickness in the as-implanted specimen, consistent with the cross-sectional transmission electron microscopy (XTEM) observations as well as SRIM simulations. Notably, amorphization was significantly reduced following rapid thermal annealing treatment, a finding confirmed in both the RBS/C and XTEM results. Plan-view transmission electron microscopy (PTEM) observations indicated no visible defects but only germanium precipitations with relatively sparse distribution. 收起