摘要 : High-frequency (HF) modeling of MOSFETs for radio-frequency (RF) integrated circuit (IC) design is discussed. Modeling of the intrinsic device and the extrinsic components is discussed by accounting for important physical effects ... 展开
作者 | Yuhua Cheng M. Jamal Deen Chih-Hung Chen |
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期刊名称 | 《IEEE Transactions on Electron Devices》 |
页码/总页数 | p.1286-1303 / 18 |
语种/中图分类号 | 英语 / TM10 TN |
关键词 | High-frequency (HF) MOSFET model MOSFET modeling MOS noise Noise modeling Radio-frequency (RF) IC design Radio-frequency (RF) modeling RFCMOS RF noise |
DOI | 10.1109/TED.2005.850656 |
馆藏号 | IELEP0099 |