摘要 : An ultra low dark current pixel has been developed for embedded active-pixel complementary metal oxide semiconductor (CMOS) image sensors using a standard CMOS logic process. Conventional CMOS image sensors suffer from high dark c... 展开
作者 | Po-Hao HUANG Hsiu-Yu CHENG Wen-Jen CHIANG Cheng-Hsiao LAI Ya-Chin KING |
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作者单位 | |
期刊名称 | 《Japanese Journal of Applied Physics. Part 2, Letters》 |
页码/总页数 | p.1734-1736 / 3 |
语种/中图分类号 | 英语 / O59 |
关键词 | dark current interface state density field oxide edge poly-silicon gate overlap capacitance dynamic range |
馆藏号 | O-168 |