摘要 : Polarization dependent analysis for AlGaN/GaN HEMT has been done. The capacitance-voltage characteristics of lattice mismatched AlGaN/GaN modulation doped field effect transistor are obtained using charge controlled analysis for i... 展开
作者 | Parvesh Gangwani Sujata Pandey Subhasis Haldar Mridula Gupta R.S. Gupta |
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作者单位 | |
期刊名称 | 《Solid-State Electronics》 |
页码/总页数 | p.130-135 / 6 |
语种/中图分类号 | 英语 / TN30 |
关键词 | AlGaN/GaN MODFET HEMT gate-source capacitance gate-drain capacitance cutoff frequency |
馆藏号 | TN-149 |