摘要 :
Since the introduction of the concept of coherent systems and the description ofthe reliability of such systems in terms of the reliabilities of the components, the concept of importance of a component has created a new and fruitf...
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Since the introduction of the concept of coherent systems and the description ofthe reliability of such systems in terms of the reliabilities of the components, the concept of importance of a component has created a new and fruitful area of research. Two distinct concepts of importance can be found in literature. For a recent survey on this topic see Boland and El-Neweihi (1990). Birnbaum (1969), Natvig (1985), Boland, El-Neweihi and Proschan (1988), and others considered the improvement in the reliability of the system which comes from the improvement of the reliability of a component, (which can be brought about by directly increasing the reliability of the component, or by augmenting it in other ways) as the importance of that component. Fussell and Vesely (1972) and Barlow and Proschan (1975) on the other hand, defined the importance of a component to be probability that the failure of the component or a module that is part of a system can be derived directly from the role of the component or the module in the failure of the system. (kr)
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A total of 401integrated circuits (IC),both monolithic and hybrid,were investigated. These devices were obtained from AUTODIN systems,which were being repaired at the Tobyhanna Army Depot, Tobyhanna,Pa. Results are discussed.
摘要 :
Data obtained from tube manufacturers, system manufacturers, and users point to problems resulting from low-volume production, technological gaps, lack of failure data feedback to the manufacturer, limited development funding, ina...
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Data obtained from tube manufacturers, system manufacturers, and users point to problems resulting from low-volume production, technological gaps, lack of failure data feedback to the manufacturer, limited development funding, inadequate reliability assurance, and the lack of a comprehensive program of repair and recycle. Past efforts to improve reliability are surveyed. Government-industry interaction is discussed, and it is suggested that it might be appropriate to encourage the continued survival of the remaining manufacturers of microwave tubes. Specific development programs are recommended in support of high-power tubes in the areas of airborne systems, shipboard systems, and support technology.
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The possibility of correlations between second breakdown energy characteristics and low level junction parameters for diodes was investigated. The low level parameters considered were ac resistance in the first breakdown region,re...
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The possibility of correlations between second breakdown energy characteristics and low level junction parameters for diodes was investigated. The low level parameters considered were ac resistance in the first breakdown region,reverse current,first breakdown voltage,breakdown voltage of the first microplasma region,and the resistivity of the high resistivity side of the junction. The diodes studied consisted of the collector-base junctions of the 2N2222, 2N2862,and 2N3304bipolar transistors. No correlations between low level electrical measurements and second breakdown energy evaluated for a 1millisecond pulse width were observed for any group of devices or for any comparison between device types. (Author)
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As the fineness of structure in microelectronics is stressed by the need for power in microwave transistors,the minimal amounts of material used in their construction are pushed to their limits. This work seeks to understand those...
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As the fineness of structure in microelectronics is stressed by the need for power in microwave transistors,the minimal amounts of material used in their construction are pushed to their limits. This work seeks to understand those limits for gold metallization and bonding,to verify the modelling experimentally,and to fit the data taken to a working guideline. It also seeks to relate accelerated data taken under normal conditions for more accurate reliability prediction.
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The intent of this report is to provide a reliability prediction technique for complex bipolar microcircuits,commonly referred to as small-,medium-,and large-scale integration. Failure mode distributions for complex microcircuits ...
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The intent of this report is to provide a reliability prediction technique for complex bipolar microcircuits,commonly referred to as small-,medium-,and large-scale integration. Failure mode distributions for complex microcircuits are projected from failure mode data on standard integrated circuits. This is done by the use of failure mode multipliers which are determined by linear extrapolations from a representative breakdown of composite industry-wide failure mode data on current state-of-the-art integrated circuits. (Author)
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A compendium of Microcircuit Failure Rates is presented which is organized according to significant generic device properties and applied stress environments. A listing of 2265 entries are compiled from data generated during gover...
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A compendium of Microcircuit Failure Rates is presented which is organized according to significant generic device properties and applied stress environments. A listing of 2265 entries are compiled from data generated during government, industrial test programs and system operations. Each entry contains failure rate statistics and modes of observed failures. Failure rates are computed at the upper 60% confidence level assuming an exponential failure distribution. This compendium is completely updated and reissued annually. (Author)
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A theoretical model was developed for the prediction of forward bias second breakdown due to lateral thermal instability in power transistors operating at low frequency. The method of analysis is to derive the steady-state current...
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A theoretical model was developed for the prediction of forward bias second breakdown due to lateral thermal instability in power transistors operating at low frequency. The method of analysis is to derive the steady-state current density and temperature distribution of a given transistor design under specified operating conditions and then calculate the response of the device to an internally applied temperature impulse. The current flow calculations were carried out using a distributed transistor model and a finite difference approach is used for the time-dependent heat flow problem. The effect of device design parameters such as chip thickness, base width, emitter width, base impurity concentration, etc., on the thermal stability was calculated. Also the effect on transistor stability of the current and voltage operating point, as well as heat sink temperature was analyzed. (Author)
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