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A crossed-field tube has successfully interrupted 10 kA against 100 kV without the use of a voltage recovery rate limiting capacitor. A smaller diameter tube, specifically constructed for this program interrupted 7.8 kA against 10...
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A crossed-field tube has successfully interrupted 10 kA against 100 kV without the use of a voltage recovery rate limiting capacitor. A smaller diameter tube, specifically constructed for this program interrupted 7.8 kA against 100 kV. These results confirm a semi-empirical scaling law which predicts the peak interruptable current level I(kA) = r(cm)/3 where r is the mean electrode radius. Experiments using dual anode feedthrough bushings to reduce the self-magnetic field did not prove effective, indicating that this field may not be responsible for the current limitation. Double pulse interruptions were accomplished at 5.9 kA against 66 kV with an interpulse time of 16.7 msec (to approximate 50 Hz operation). No difficulties were encountered under these conditions indicating that repetitive operation does not cause significant gas pressure fluctuations. Also, dissipation calculations and measurements were made for a 100 microsec square current pulse interrupted against 100 kV. The dissipated energy per shot was found to be 250 J/kA.
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Corbino disc devices of InSb are fabricated for use as high power switches. Resistance is increased from on state to off state by application of a pulsed, coaxial magnetic field. InSb with doping of 10 to the 15th power-10 to the ...
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Corbino disc devices of InSb are fabricated for use as high power switches. Resistance is increased from on state to off state by application of a pulsed, coaxial magnetic field. InSb with doping of 10 to the 15th power-10 to the 17th power donors per cc is used for switching currents from 20 to 1000 amperes. Off to on resistance ratios of 200 are observed at currents of 20 amperes. Testing at higher currents leads to a surface breakdown phenomena which limits the resistance ratio to values considerably below theoretical predication. It is proposed that proper surface passivation would eliminate this problem. Bulk silicon is also investigated for use as a high current switch. Devices have been tested with incandescent lamp, laser, and electron beam input. Though resistance changes of 2-4 orders of magnitude are observed, high contact resistance is a limiting factor in obtaining a low on resistance. The use of ion-implanted contact regions is proposed for improving contacts.
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A diffuse gas discharge switch must be capable of high speed, repetitive switching (i.e., switching times (0.7 less than or equal to < 5 eV) over the temperature range 300 less than or equal to T less than or equal to 750 K. For C sub 2 F sub 6 , the electron attachment rate constant has been found to increase by 30% over this temperature range, while for C sub 3 F sub 8 , the attachment rate constant first decreases when the temperature is increased to approx.450 K and then significantly increases with increasing T. An interpretation of these measurements and their significance in repetitively operated diffuse discharge switching gas mixtures is outlined. (ERA citation 10:034377)...
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A diffuse gas discharge switch must be capable of high speed, repetitive switching (i.e., switching times (0.7 less than or equal to < 5 eV) over the temperature range 300 less than or equal to T less than or equal to 750 K. For C sub 2 F sub 6 , the electron attachment rate constant has been found to increase by 30% over this temperature range, while for C sub 3 F sub 8 , the attachment rate constant first decreases when the temperature is increased to approx.450 K and then significantly increases with increasing T. An interpretation of these measurements and their significance in repetitively operated diffuse discharge switching gas mixtures is outlined. (ERA citation 10:034377)
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摘要 :
A diffuse gas discharge switch must be capable of high speed, repetitive switching without significant degradation of its electron conduction and opening characteristics if it is to be useful in pulsed power switching applications...
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A diffuse gas discharge switch must be capable of high speed, repetitive switching without significant degradation of its electron conduction and opening characteristics if it is to be useful in pulsed power switching applications. Whenever the switch is fired, the gas temperature T within the switch is expected to rise several degrees centigrade, and operating temperatures of several hundred degrees are likely for repetitively operated switches. The electron transport and rate coefficients, such as the electron drift velocity and the electron attachment coefficient for the most promising gas mixtures under study are expected to be funcions of T, and consequently, knowledge of these parameters as a function of T is desirable for modeling the operation of the diffuse discharge switch in practical application. Meausrements of these parameters in C sub 2 F sub 6 /buffer gas (Ar, Ch sub 4 , N sub 2 ) mixtures have been made and are reported. The electron attachment rate constant has also been measured for C sub 2 F sub 6 and C sub 3 F sub 8 as a function of the mean electron energy over the temperature range 300 less than or equal to T less than or equal to 750 K. For C sub 2 F sub 6 , the electron attachment rate constant has been found to increase by 30% over this temperature range, while for C sub 3 F sub 6 , the attachment rate constant first decreases when the temperature is increased to approx.450 K and then significantly increases with increasing T. An interpretation of these measurements and their significance in repetitively operated diffuse discharge switching gas mixtures is outlined. (ERA citation 11:011770)
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Circuit concepts for realization of highly reliable and efficient electronic subsystems and microminiaturization application - switching amplifier analysis
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The objective of Phase I of the 4 ESS Switch RHA Program documented in this report is the preliminary assessment of the inherent fallout-radiation susceptibility of the 4 ESS Switch. The approach described herein consists of the i...
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The objective of Phase I of the 4 ESS Switch RHA Program documented in this report is the preliminary assessment of the inherent fallout-radiation susceptibility of the 4 ESS Switch. The approach described herein consists of the identification of the active microelectronic piece-parts used in the 4 ESS Switch; characterization of their radiation tolerance, based on available data; preliminary identification of hardness-critical packs; and preliminary analysis of 4 ESS Switch performance during expose to ambient (unshielded) fallout radiation, also based on available data. (Author)
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Switching-node, or class-D, amplification may be used to take advantage of the high efficiency of operating transistors in the saturation region. This report describes the theoretical analysis of a basic switching-mode amplifier c...
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Switching-node, or class-D, amplification may be used to take advantage of the high efficiency of operating transistors in the saturation region. This report describes the theoretical analysis of a basic switching-mode amplifier configuration, and reduces the theoretical material to a specific procedure for the practical design of switching-mode amplifiers for a variety of applications. The basic configuration features high overall efficiency, low quiescent power consumption, a filtered, analog output signal, and adaptability to a wide variety of input, feedback and load configurations. Included is a design example with a maximum d-c power output of 150 watts at an overall efficiency of 90% at maximum power output.
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Light-activated solid-state opening switches are shown to be a viable approach for switching inductive circuits. Measured photoswitch performance indicates that light-activated opening switches have the power density ratings neede...
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Light-activated solid-state opening switches are shown to be a viable approach for switching inductive circuits. Measured photoswitch performance indicates that light-activated opening switches have the power density ratings needed to develop compact inductive power systems.... High current opening switch, Solid state switches, Cryogenic silicon switches, Photoconductor switches.
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