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This paper describes the technology, design features and reliability characterization methodology of a CMOS Active Pixel Sensor. Both overall chip reliability and pixel reliability are projected for the imagers.
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We present architecture, process design and results from test pixels of a new Active Pixel Sensor (APS) imager implemented in 0.8 um SOI-CMOS technology.
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The guidance system in a spacecraft determines spacecraft attitude by matching an observed star field to a star catalog....An APS(active pixel sensor)-based system can reduce mass and power consumption and radiation effects compa...
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The guidance system in a spacecraft determines spacecraft attitude by matching an observed star field to a star catalog....An APS(active pixel sensor)-based system can reduce mass and power consumption and radiation effects compared to a CCD(charge-coupled device)-based system...This paper reports an APS (active pixel sensor) with locally variable times, achieved through individual pixel reset (IPR).
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摘要 :
Two 8 bit successive approximation analog-to-digital converters (ADC) and a 12 bit current mode incremental sigma delta ADC have been designed, fabricated, and tested.
摘要 :
The design and projected performance of a low-light-level active-pixel-sensor (APS) chip with semi-parallel analog-to-digital (A/D) conversion is presented. The individual elements have been fabricated and tested using MOSIS 2 m...
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The design and projected performance of a low-light-level active-pixel-sensor (APS) chip with semi-parallel analog-to-digital (A/D) conversion is presented. The individual elements have been fabricated and tested using MOSIS 2 micrometer CMOS technology, although the integrated system has not yet been fabricated. The imager consists of a 128 x 128 array of active pixels at a 50 micrometer pitch. Each column of pixels shares a 10-bit A/D converter based on first-order oversampled sigma-delta (Sigma-Delta) modulation. The 10-bit outputs of each converter are multiplexed and read out through a single set of outputs. A semi-parallel architecture is chosen to achieve 30 frames/second operation even at low light levels. The sensor is designed for less than 12 e- rms noise performance.
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