摘要 :
SUSS has introduced the X8S300 hybrid fusion banding platform including ·Plasma activation module ·Wet cleaning module ·Bond afigner with proprietary run-out control ·Low force bond chamber (for R&D) and dedicated cool plate ·Detaching station with heated chuck (up to 200℃) option for pPW and W2W applications ·Integrated Metrology for IR overlay measurement and full surface void detectionStrategic JDP (D2W) with IMEC using SUSS bonder equipment ongoing and to be extended Internal development project for ＜+/-100nm (3σ) overlay with 200mm XBA prototype implemented in Q4/2019 Hardware upgrade of 300mm XBA finished in Q3 / 2020Full cluster demo capability since Q4 2018 ·Overlay capability until August 2019: ＜±400nm (3σ) ·As of June 2020:＜100nm (3σ) overlay proven on 200mm (＜50nm mean overlayi) no shift ＞100nm on entire wafer ＜100nm (3σ) overlay proven on 300mm (<50nm mean overlays),max shift approx. 120nmNext:·Full 100nm overlay (3σ) demo capability in Q3/2020→no shift ＞100nm on entire wafer·Target for end of 2020 [for 200mm and 300mm):＜75nm overlay (3σ) 。...
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SUSS has introduced the X8S300 hybrid fusion banding platform including ·Plasma activation module ·Wet cleaning module ·Bond afigner with proprietary run-out control ·Low force bond chamber (for R&D) and dedicated cool plate ·Detaching station with heated chuck (up to 200℃) option for pPW and W2W applications ·Integrated Metrology for IR overlay measurement and full surface void detectionStrategic JDP (D2W) with IMEC using SUSS bonder equipment ongoing and to be extended Internal development project for ＜+/-100nm (3σ) overlay with 200mm XBA prototype implemented in Q4/2019 Hardware upgrade of 300mm XBA finished in Q3 / 2020Full cluster demo capability since Q4 2018 ·Overlay capability until August 2019: ＜±400nm (3σ) ·As of June 2020:＜100nm (3σ) overlay proven on 200mm (＜50nm mean overlayi) no shift ＞100nm on entire wafer ＜100nm (3σ) overlay proven on 300mm (<50nm mean overlays),max shift approx. 120nmNext:·Full 100nm overlay (3σ) demo capability in Q3/2020→no shift ＞100nm on entire wafer·Target for end of 2020 [for 200mm and 300mm):＜75nm overlay (3σ) 。
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