摘要 :
We investigate the crystallization of amorphous Ge alloy layers on silicon substrates for optical and electronic applications. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequen...
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We investigate the crystallization of amorphous Ge alloy layers on silicon substrates for optical and electronic applications. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by solid phase epitaxy. Structural investigation shows excellent structural quality for layers with up to 6.1% Sn. The surface and interface are smooth thanks to the low thermal budget. The GeSn layers show a significant increase in optical absorption with respect to Ge. We demonstrate tensile-strained GeSn p-type pMOSFET devices on Si(111) substrates using solid phase epitaxy of amorphous GeSn layer, with 4.5% Sn and +0.33% tensile strain. Structural investigation showed the presence of twin defects in the GeSn layers after crystallization. In this work we present a method to effectively suppress the formation of twin defects. Furthermore we demonstrate the crystallization of multiple amorphous layers in a 1 step anneal.
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摘要 :
We investigate the crystallization of amorphous Ge alloy layers on silicon substrates for optical and electronic applications. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequen...
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We investigate the crystallization of amorphous Ge alloy layers on silicon substrates for optical and electronic applications. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequent annealing transforms the amorphous layer into single-crystalline GeSn by solid phase epitaxy. Structural investigation shows excellent structural quality for layers with up to 6.1% Sn. The surface and interface are smooth thanks to the low thermal budget. The GeSn layers show a significant increase in optical absorption with respect to Ge. We demonstrate tensile-strained GeSn p-type pMOSFET devices on Si(111) substrates using solid phase epitaxy of amorphous GeSn layer, with 4.5% Sn and +0.33% tensile strain. Structural investigation showed the presence of twin defects in the GeSn layers after crystallization. In this work we present a method to effectively suppress the formation of twin defects. Furthermore we demonstrate the crystallization of multiple amorphous layers in a 1 step anneal.
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The interaction of EUV light with matter is a critical step in EUV lithographic processes and optimization of the optical material parameters of photoresists and reflector/absorber stacks is crucial to harness the full power of EU...
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The interaction of EUV light with matter is a critical step in EUV lithographic processes and optimization of the optical material parameters of photoresists and reflector/absorber stacks is crucial to harness the full power of EUV lithography. To optimize these materials, accurate measurements of EUV absorption and reflection are needed to extract the corresponding actinic optical properties and structural parameters. Here, we report on two endstations within imec's AttoLab that enable actinic EUV absorption and reflection measurements. We commission these tools with measurements on model thin film and photoresist systems and provide extracted optical parameters as well as absorption kinetics, respectively. These results showcase the power of these tools for providing crucial data for material optimization and lithographic simulation.
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X-ray fluorescence techniques in special operation modes can provide valuable quantitative insights for semiconductor related applications and can be made compatible to typical sizes of homogeneously structured metrology pads. As ...
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X-ray fluorescence techniques in special operation modes can provide valuable quantitative insights for semiconductor related applications and can be made compatible to typical sizes of homogeneously structured metrology pads. As their dimensions are usually in the order of several 10 μm per direction, it must be ensured that no adjacent regions are irradiated or that no X-ray fluorescence radiation from adjacent areas reaches the detector. As this can be realized by using small excitation beams, a multitude of information can be retrieved from such XRF data. In addition to elemental composition, including sensitivity to sub-surface features, one can derive quantitative amounts of material and even dimensional properties of the nanostructures under study. Here, we show three different approaches for studies related to semiconductor applications that are capable to be performed on real world dies with commonly sized metrology pads.
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The last decennia, a lot of effort has been made to introduce new channel materials in a Si process flow. High mobility materials such as Ge need a good gate stack passivation in order to ensure optimal MOSFET operation. Several r...
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The last decennia, a lot of effort has been made to introduce new channel materials in a Si process flow. High mobility materials such as Ge need a good gate stack passivation in order to ensure optimal MOSFET operation. Several routes for passivating the Ge gate stack have been explored in the last years. We present here the S-passivation of the Ge gate stack: (NH_4)_2S is used to create a S-terminated Ge surface. In this paper the S-treatment is discussed. The S-terminated Ge surface is not chemically passive but can still react with air. After gate oxide deposition, the Ge-S bonds are preserved and an adequate passivation is found for pMOS operation.
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Recently, the search for alternative metallization schemes beyond Cu has been extended from elemental metals to binary and ternary intermetallics. Here, we review our material selection process for binary intermetallic compounds a...
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Recently, the search for alternative metallization schemes beyond Cu has been extended from elemental metals to binary and ternary intermetallics. Here, we review our material selection process for binary intermetallic compounds and discuss the additional complexities to understand the transport in such metals with respect to elemental metals. A simple but practical resistance model for binary compounds is proposed by extending the Mayadas-Shatzkes model for ordered intermetallics.
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The accurate in-depth characterization of nanoscaled layer systems is of importance for current developments in many fields of materials research. Thin high-κ layers, gate stacks and ultra-shallow dopant profiles involving many d...
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The accurate in-depth characterization of nanoscaled layer systems is of importance for current developments in many fields of materials research. Thin high-κ layers, gate stacks and ultra-shallow dopant profiles involving many different chemical elements are technologically relevant for current and future electronic devices. The reliable characterization of such systems presents several metrological challenges and requires further development of the available analytical techniques. Furthermore, quantitative analysis usually relies on nanoscaled reference materials or calibration samples of sufficient quality and equality with respect to the actual analytical problem.
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