摘要: We investigate the crystallization of amorphous Ge alloy layers on silicon substrates for optical and electronic applications. Amorphous GeSn layers are obtained by limiting the adatom surface mobility during deposition. Subsequen... 展开
作者 | Ruben R. Lieten Tatsuro Maeda Jin Won Seo Wipakorn Jevasuwan Hiroyuki Hattori Noriyuki Uchida Shu Miura Masatoshi Tanaka Claudia Fleischmann Andre Vantomme Brett C. Johnson Jean-Pierre Locquet | ||
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作者单位 | |||
文集名称 | High Purity and High Mobility Semiconductors 13 | ||
出版年 | 2014 | ||
会议名称 | High Purity and High Mobility Semiconductors Symposium | ||
页码 | 149-160 | 开始页/总页数 | 00000149 / 12 |
会议年/会议届次 | 2014 / 13th | ||
馆藏号 | P1600813 |